Performance Improvement and Optimization of Nanomaterial-Based Liner Materials for 3D-IC Integration

Several technological advancements have been made owing to the growth of IC. Devices are used daily, and, as a result, they have significantly impacted lives and existence, which would be incomprehensible without them. As a result, the reliability issues associated with recent devices necessitate extraordinary, specialized efforts. Accommodating several devices in a single and planar IC leads to various system-level damages to the IC, like the hot carrier effect, oxide breakdown, etc. This paper examines optimization strategies to improve the performance of nanomaterial-based liner materials in noise coupling sustainability. It also gives a complete defect analysis of those materials through electrical interventions. Active devices in one IC are integrated through another IC via vertical bonding. Electrical interference with nearby Through Silicon Vias (TSVs) and operational transistors is a major issue when implementing 3D IC, since it significantly lowers system efficiency. This study provides an innovative way to reduce electrical interference by utilizing several electrical interference designs, which include the TTSV framework, which also incorporates Thermal TSV while simulation, and the ETSV framework, which solely utilizes electrical signal carrying TSV. The study examined the electrical intervention of TSV-carrying signals to the substrate and other TSV. Additionally, using several suggested designs, this work shows further elevated frequency regimes up to 1 THz. Our simulation result suggests the proposed model has a marginal advantage in 3D IC developments with more than a $30 \%$ drop in electrical signal intervention from signal-carrying TSV to other TSV. Additionally, a guard ring was used to demonstrate electrical interference. When Teflon AF1600 liner material was used at the victim along with a P+ protection ring, TSV demonstrated very little electrical interference.