Internal Quantum Efficiency of Active Region for GaAsBi-Based Emitters
We present a comparative optical study on different GaAsBi/GaAs quantum structures, used as active area for near-infrared emitters. Our findings highlight the role of Bi concentration and growth temperature on carrier recombination and emission efficiency.
Authors
- Bronislovas Čechavičius (ORCID: https://orcid.org/0000-0002-7119-7213)
- Renata Butkutė (ORCID: https://orcid.org/0000-0002-1682-056X)
- Evelina Dudutienė (ORCID: https://orcid.org/0000-0003-1097-8531)
- Andrea Zelioli (ORCID: https://orcid.org/0000-0001-6829-3549)
- Steponas Raišys (ORCID: https://orcid.org/0000-0002-5810-7199)
- Aistė Štaupienė
Institutions
- Vilnius University (LT)
- Center for Physical Sciences and Technology (LT)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11110770
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00