Low Parasitic Loop Inductance Design and Characterization of a 1200 V, 200 A SiC MOSFET Half-Bridge PCB-embedded Power Module

In this article, the design and characterization of a 1200 V, 200 A rated printed circuit board (PCB) embedded silicon carbide (SiC) MOSFET half-bridge is being presented. The layout of the power module has been optimized to reduce the power loop inductance, achieving a 1.5 nH of power loop inductance. The dimensions of the fabricated module are 48 mm x 32 mm (L x B), with the thickness being 0.35 mm, leading to a reduction of 57% in footprint and a reduction of 95% in volume compared to commercially available half-bridge SiC MOSFET power modules of 1200 V, 200 A with the GM4 package.