Discrete Demonstration of Heterogeneous Photonic-Electronic Integrated Optical Gate Driver for SiC MOSFETs

Wide bandgap (WBG) and ultrawide bandgap (UWBG) power devices offer significant advantages over traditional silicon (Si) semiconductors, particularly in medium-and high-voltage applications. However, realizing their full potential requires reliable switching and protection circuitry. A major challenge lies in designing compact and robust peripheral systems—especially gate drivers—that provide precise control while maintaining galvanic isolation. Conventional gate-driving methods based on transformers or isolated coils are bulky, susceptible to EMI, and limited by high common-mode dV/dt due to parasitic coupling capacitance. Optical gate triggering presents a promising alternative by simplifying isolation and minimizing EMI, yet current implementations using discrete optoelectronic components are hindered by large parasitics and limited integration. This work is part of a broader effort to develop a heterogeneous photonic-electronic integrated system for high-speed, compact, and high-voltage gate triggering in WBG/UWBG power converters. As a first step, we demonstrate a discrete optical gate driver operating at 100 kHz and validate its performance with a 1.6 kV double-pulse test, establishing key design insights for future integration.