A Mems-Based Electrochemical Vibration Sensors with Optimized Flow-Resistance and High-Reliability Sensitive Unit

This work presents a new fabrication method for a sensitive electrode in an electrochemical vibration sensor, incorporating a silicon groove design that effectively decouples the flow hole depth from the silicon wafer thickness. This design preserves mechanical strength while allowing flexible adjustment of the flow hole depth within the device. In addition, positioning anodes on the wafer's groove side reduces the spacing between the two cathodes during assembly, minimizing signal distortion. Experimental results demonstrated that the proposed sensor achieved a peak sensitivity of 9505 V/(m/s) with 1 k transfer resistance and 1x differential amplification, a 3 dB working bandwidth from 1.36 to 100 Hz, and a self-noise level of -171 dB at 1 Hz, indicating its potential for vibration monitoring in deep earth exploration.