Design, Simulation, and Characterization of InGaAs/AlGaAsSb SPADs
We evaluate SPADs with an AlGaAsSb multiplication layer, where simulations indicate low dark current and high responsivity. Measurements at 200 K reveal IV characteristics and activation energy, validating the proposed structure design.
Authors
- Xuewen Liu (ORCID: https://orcid.org/0000-0003-3652-7237)
- Yi-Shan Lee (ORCID: https://orcid.org/0000-0002-0512-9503)
Institutions
- National Tsing Hua University (TW)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11111247
- Primary Topic
- Advanced Optical Sensing Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Taiwan Semiconductor Manufacturing Company
- Thailand Science Research and Innovation
- Center for Nanoscale Science and Technology