Thermal Analysis for Germanium-Silicon Quantum Confined Stark Effect Electro-Absorption Modulators
We present an initial thermal study for <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$O$</tex>-band GeSi quantum confined stark effect electro-absorption modulator on a 300 mm Si photonics platform. High temperature insertion loss, extinction ratio and dark current are presented. Keywords: Quantum well, Si/Ge, Optical modulators, Photonic integrated circuits.
Authors
- Javad Rahimi Vaskasi
- Maumita Chakrabarti (ORCID: https://orcid.org/0000-0003-4584-0399)
- Hakim Kobbi
- Dries Van Thourhout (ORCID: https://orcid.org/0000-0003-0111-431X)
- Filippo Ferraro (ORCID: https://orcid.org/0000-0002-9328-5548)
- Dimitrios Velenis (ORCID: https://orcid.org/0000-0001-7947-8098)
- Conor Coughlan (ORCID: https://orcid.org/0000-0002-6372-3076)
- Artemisia Tsiara (ORCID: https://orcid.org/0000-0002-5612-6468)
- Yosuke Shimura (ORCID: https://orcid.org/0000-0002-1944-9970)
- Amir Shahin (ORCID: https://orcid.org/0000-0001-5657-1791)
- Joris Van Campenhout (ORCID: https://orcid.org/0000-0003-0778-2669)
- Ahmed Kandeel
- Yoojin Ban (ORCID: https://orcid.org/0000-0001-7319-8132)
Institutions
- Ghent University (BE)
- IMEC (BE)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11111309
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00