Investigation of Thermo-Optic Phase Shifters for a 500-nm-Thick Silicon on Insulator Platform
We investigate a thermo-optic phase shifter on an SOI platform with 500 nm Si and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1 \mu ~\mathrm{m}\ B O X$</tex>, which exhibits a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$P_{\pi}$</tex> value of 54.7 mW and a response time of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$7 \mu ~\mathrm{s}$</tex>.
Authors
- Min-Suk Kwon (ORCID: https://orcid.org/0000-0002-0779-9308)
- Jihoon Seo (ORCID: https://orcid.org/0000-0002-2878-4551)
- Jungwoo Lee (ORCID: https://orcid.org/0000-0003-4772-1289)
Institutions
- Ulsan National Institute of Science and Technology (KR)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11110342
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00