Optimizing MBE Growth of GaAsBi Quantum Wells for Biosensing Focused Laser Diodes
This work is focused at optimizing the growth and design of a novel NIR material - GaAsBi. The MBE growth and characterization of GaAsBi quantum structures and GaAsBi quantum well based emitters is presented.
Authors
- Bronislovas Čechavičius (ORCID: https://orcid.org/0000-0002-7119-7213)
- Renata Butkutė (ORCID: https://orcid.org/0000-0002-1682-056X)
- Sandra Stanionytė (ORCID: https://orcid.org/0000-0003-0018-5036)
- Evelina Dudutienė (ORCID: https://orcid.org/0000-0003-1097-8531)
- Andrea Zelioli (ORCID: https://orcid.org/0000-0001-6829-3549)
- Mindaugas Kamarauskas (ORCID: https://orcid.org/0000-0003-4721-9694)
- Andrius Bičiūnas (ORCID: https://orcid.org/0000-0001-9456-9027)
- Aivaras Špokas (ORCID: https://orcid.org/0009-0009-9289-0285)
Institutions
- Center for Physical Sciences and Technology (LT)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11109525
- Primary Topic
- Nanowire Synthesis and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Lietuvos Mokslo Taryba