Impact of the Body Biasing in Dickson Charge Pump Circuits with UTBB Transistors Working in Diode Mode
This study investigates the impact of body bias in Dickson pumping circuits using UTBB (Ultra-Thin Body and Buried Oxide) transistors configured in diode mode. Dickson pump circuits are widely used in voltage multiplication applications, and the incorporation of active back bias aims to enhance their efficiency and stability. By utilizing a UTBB transistor in diode mode, the circuit's performance is optimized, leading to improved voltage gain and reduced losses. This paper explores the theoretical bases of the circuit, analyzes the effect of active back bias on the output DC voltage, and evaluates the overall performance through simulations. The results demonstrate that positive back bias significantly influences the behavior of the Dickson pump circuit, offering insights into the design of more efficient power management systems for advanced electronic applications.
Authors
- Rodrigo T. Doria (ORCID: https://orcid.org/0000-0003-4448-4337)
- E. T. Fonte
Institutions
- Centro Universitário FEI (BR)
- X-Fab (Germany) (DE)
Publication Details
- Published
- 2025-04-23
- DOI
- https://doi.org/10.1109/lciot64881.2025.11118593
- Citations
- 2
- Primary Topic
- Plasma Diagnostics and Applications
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- Fundação de Amparo à Pesquisa do Estado de São Paulo
- Conselho Nacional de Desenvolvimento Científico e Tecnológico