O-Band Gaas Quantum Dot Optical Amplifier Integrated on an Advanced Sin Platform
We present an O-band GaAs optical amplifier integrated on an advanced SiN platform using micro-transfer printing. A polycrystalline Si layer facilitates light coupling between GaAs and SiN, resulting 5 dB on-chip gain at 1300 nm.
Authors
- Michael Geiselmann
- Tom Reep (ORCID: https://orcid.org/0000-0002-5223-5480)
- Stijn Poelman (ORCID: https://orcid.org/0000-0002-8374-1466)
- Jing Zhang (ORCID: https://orcid.org/0000-0001-6608-9990)
- Stijn Cuyvers (ORCID: https://orcid.org/0000-0002-0943-9779)
- Günther Roelkens (ORCID: https://orcid.org/0000-0002-4667-5092)
- Camiel Op de Beeck (ORCID: https://orcid.org/0000-0001-9355-6603)
- Bart Kuyken (ORCID: https://orcid.org/0000-0002-8745-7833)
- José Carreira
- L.T. Tran (ORCID: https://orcid.org/0000-0003-2743-0425)
- Dongbo Wang (ORCID: https://orcid.org/0000-0003-1055-0252)
Institutions
- Ghent University (BE)
- École Polytechnique Fédérale de Lausanne (CH)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11110589
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00