Mitigating TPA-Induced Instability in III-V/Si Hybrid Laser via Reverse-Biased PIN Junctions
We demonstrate a III-V/Si external cavity laser incorporating PIN junctions within silicon microring resonators. By sweeping the TPA-induced carriers using reverse PIN junction, the laser exhibits superior performance compared with its unbiased counterpart.
Authors
- Weihan Xu (ORCID: https://orcid.org/0000-0001-5266-3656)
- Linjie Zhou (ORCID: https://orcid.org/0000-0002-2792-2959)
- Yihao Fan
- E Siyu
- Minhui Jin
- Yuyao Guo (ORCID: https://orcid.org/0000-0002-5356-7188)
- Li Yu (ORCID: https://orcid.org/0000-0003-4134-585X)
- Xinhang Li (ORCID: https://orcid.org/0000-0001-8220-1313)
- Jianping Chen
- Liangjun Lu
Institutions
- Shanghai Jiao Tong University (CN)
Publication Details
- Published
- 2025-06-29
- DOI
- https://doi.org/10.23919/oecc/psc62146.2025.11109361
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- National Key Research and Development Program of China