High-performance GaN-based green laser diodes with low thermal degradation via hybrid MOCVD-MBE growth
The high-temperature growth of p-type layers via metal-organic chemical vapor deposition (MOCVD) often leads to thermal degradation of the InGaN quantum wells (QWs) in green laser diodes. In this study, a hybrid MOCVD-MBE (molecular beam epitaxy) growth approach was employed to fabricate green laser diodes, achieving high device performance and excellent uniformity, with a lasing wavelength of 504.9 nm and a threshold current density of 2.8 kA/cm2. Comparative device performance investigation demonstrates that replacing the MOCVD-grown p-type layers with those grown by MBE effectively suppresses thermal degradation in green InGaN QWs.
Authors
- Jun Fang (ORCID: https://orcid.org/0000-0001-6803-4950)
- Yi Hao Gong (ORCID: https://orcid.org/0000-0002-3721-2678)
- Xuan Li (ORCID: https://orcid.org/0000-0001-9937-1108)
- Kanglin Xiong (ORCID: https://orcid.org/0000-0001-9439-8643)
- Jianping Liu (ORCID: https://orcid.org/0000-0002-1559-7060)
- Wenxian Yang (ORCID: https://orcid.org/0000-0002-1718-071X)
- Aiqin Tian (ORCID: https://orcid.org/0000-0002-2203-6173)
- Hui Yang (ORCID: https://orcid.org/0000-0003-0999-1595)
Institutions
- University of Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Suzhou Institute of Nano-tech and Nano-bionics (CN)
- Suzhou Research Institute (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-08-18
- DOI
- https://doi.org/10.1063/5.0289525
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.52
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Jiangsu Province
- National Key Research and Development Program of China