Design and Demonstration of a 10 kV, 60 A SiC MOSFET-Based Medium-Voltage Power Module

Silicon carbide (SiC) MOSFETs with voltage ratings above 3.3 kV are emerging as key enablers for next-generation medium-voltage (MV) power conversion systems, offering superior blocking capabilities, faster switching speeds, and an improved thermal performance compared to conventional silicon IGBTs. However, the practical deployment of 10 kV SiC devices remains constrained by the immaturity of high-voltage chip and packaging technologies. Current development is often limited to engineering samples provided by a few suppliers and custom packaging solutions evaluated only in laboratory settings. To advance the commercialization of 10 kV SiC power modules, this paper presents the design and characterization of a 10 kV, 60 A half-bridge module employing the XHP housing and newly developed SiC MOSFET chips from China Electronics Technology Group Corporation (CETC). Electro-thermal simulations based on a finite element analysis were conducted to extract key performance parameters, with a measured parasitic inductance of 24 nH and a thermal resistance of 0.0948 K/W. To further validate the packaging concept, a double-pulse test platform was implemented. The dynamic switching behavior of the module was experimentally verified under a 6 kV DC-link voltage, demonstrating the feasibility competitiveness of this approach and paving the way for the industrial adoption of 10 kV SiC technology in MV applications.