Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS <sub>2</sub> –MoS <sub>2</sub> Lateral Heterostructures

Abstract 2D transition metal dichalcogenides heterostructures are driving advancements in next‐generation optoelectronic technologies. Lateral 2D heterojunctions with atomically seamless interfaces play a vital role in modulating charge separation and carrier dynamics, yet underlying transport mechanisms remain inadequately understood, limiting practical deployment. Here, monolayer WS 2 ‐MoS 2 lateral edge‐epitaxial heterostructures synthesized via chemical vapor deposition (CVD), providing critical insights into heterointerface effects on charge distribution and photoresponse are reported. Photodetector fabricated from this heterostructures exhibit broadband spectral response from ultraviolet to near‐infrared, achieving peak responsivity of 1850 mA W −1 and detectivity of 4.36 × 10 11 Jones under 565 nm illumination. This represents ≈200% enhancement compared to individual monolayer MoS 2 or WS 2 devices, directly demonstrating the synergistic benefits of lateral heterostructure engineering. Spatially resolved surface potential mapping and second‐harmonic generation imaging reveal that enhanced performance originates at the epitaxial interface, confirming the critical role of interfacial electric fields and nonlinear optical effects in charge carrier dynamics. The characterization provides direct experimental evidence linking atomically seamless interface properties to macroscopic device performance enhancements. These findings underscore the significant potential of CVD‐grown WS 2 ‐MoS 2 lateral heterostructures for high‐performance photodetectors and establish interface engineering as a powerful strategy for advancing 2D semiconductor device technologies.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-08-19
DOI
https://doi.org/10.1002/adfm.202512962
Citations
29
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
15.02

Funders

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article

Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS 2 –MoS 2 Lateral Heterostructures

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29 citations
Advanced Functional Materials
2D Materials and Applications
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article

Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS 2 –MoS 2 Lateral Heterostructures

Irfan Haider Abidi, Jani Kotakoski, Edwin L. H. Mayes, Yuerui Lu, N. Dissanayake, Billy J. Murdoch, Vishnu Aggarwal, Pargam Vashishtha, Ajay Kumar Verma, Govind Gupta, Sumeet Walia, Jeffrey A. Davis, Jonathan O. Tollerud, Taimur Ahmed, Manoj Sehrawat, Deepak K. Sharma, Sindhu Priya Giridhar, Clara Kofler, T. K. Gupta
article en
29 citations

Abstract

Abstract 2D transition metal dichalcogenides heterostructures are driving advancements in next‐generation optoelectronic technologies. Lateral 2D heterojunctions with atomically seamless interfaces play a vital role in modulating charge separation and carrier dynamics, yet underlying transport mechanisms remain inadequately understood, limiting practical deployment. Here, monolayer WS 2 ‐MoS 2 lateral edge‐epitaxial heterostructures synthesized via chemical vapor deposition (CVD), providing critical insights into heterointerface effects on charge distribution and photoresponse are reported. Photodetector fabricated from this heterostructures exhibit broadband spectral response from ultraviolet to near‐infrared, achieving peak responsivity of 1850 mA W −1 and detectivity of 4.36 × 10 11 Jones under 565 nm illumination. This represents ≈200% enhancement compared to individual monolayer MoS 2 or WS 2 devices, directly demonstrating the synergistic benefits of lateral heterostructure engineering. Spatially resolved surface potential mapping and second‐harmonic generation imaging reveal that enhanced performance originates at the epitaxial interface, confirming the critical role of interfacial electric fields and nonlinear optical effects in charge carrier dynamics. The characterization provides direct experimental evidence linking atomically seamless interface properties to macroscopic device performance enhancements. These findings underscore the significant potential of CVD‐grown WS 2 ‐MoS 2 lateral heterostructures for high‐performance photodetectors and establish interface engineering as a powerful strategy for advancing 2D semiconductor device technologies.

Advanced Functional MaterialsVol. 36(8)
Karlsruhe Institute of Technology (DE), Australian National University (AU), University of Vienna (AT), La Trobe University (AU), MIT University (MK), Swinburne University of Technology (AU), Council of Scientific and Industrial Research (IN), University of Arkansas at Fayetteville (US), RMIT University (AU), CSIR National Physical Laboratory of India (IN), Academy of Scientific and Innovative Research (IN)
Australian National Fabrication Facility, Ontario Ministry of Natural Resources and Forestry, RMIT University, Academy of Scientific and Innovative Research, Australian Research Council, National Physical Laboratory, Defence Science and Technology Group, Office of National Intelligence
Openalex Percentile: Top 1%
2D Materials and Applications
15.02
DOIOpen Access PDFOpenAlex
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