Atomic Layer Deposition of Superconductive Niobium Carbonitride Thin Films

Transition metal carbonitrides (TMCN) are stable materials with excellent catalytic and superconductive properties. Atomic layer deposition (ALD) stands out as the optimal method for the fabrication of these materials, enabling their use in future applications. In this study, we deposit ALD NbC <sub><i>x</i></sub> N <sub><i>y</i></sub> films at 250-450 °C with NbF<sub>5</sub> and 1,4-bis-(trimethylsilyl)-1,4-dihydropyrazine on Si, Ru, TiN, and soda lime glass. We analyze the film growth characteristics, composition, and phase. The films show substrate-enhanced growth on Si with a growth per cycle (GPC) of 1.3 Å. Additionally, the films were superconductive as-deposited and had a superconducting critical temperature (<i>T</i> <sub><i>c</i></sub> ) of 14.5 K after annealing at 950 °C. This work expands the range of TMCNs deposited by ALD and demonstrates the applicability of ALD for thin film materials with a high <i>T</i> <sub><i>c</i></sub> .

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Publication Details

Journal
Chemistry of Materials
Published
2025-08-19
DOI
https://doi.org/10.1021/acs.chemmater.5c01456
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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article

Atomic Layer Deposition of Superconductive Niobium Carbonitride Thin Films

Paloma Ruiz Kärkkäinen, Kestutis Grigoras, Marco Marín‐Suárez, Anton Vihervaara et al.
Chemistry of Materials
Semiconductor materials and devices
article

Atomic Layer Deposition of Superconductive Niobium Carbonitride Thin Films

Paloma Ruiz Kärkkäinen, Kestutis Grigoras, Marco Marín‐Suárez, Anton Vihervaara, K. Kohopää, Mykhailo Chundak, Matti Putkonen, Kenichiro Mizohata, Georgi Popov, Timo Hatanpää, Mikko Ritala, Mikko Heikkilä, A. Kemppinen
article en

Abstract

Transition metal carbonitrides (TMCN) are stable materials with excellent catalytic and superconductive properties. Atomic layer deposition (ALD) stands out as the optimal method for the fabrication of these materials, enabling their use in future applications. In this study, we deposit ALD NbC <sub><i>x</i></sub> N <sub><i>y</i></sub> films at 250-450 °C with NbF<sub>5</sub> and 1,4-bis-(trimethylsilyl)-1,4-dihydropyrazine on Si, Ru, TiN, and soda lime glass. We analyze the film growth characteristics, composition, and phase. The films show substrate-enhanced growth on Si with a growth per cycle (GPC) of 1.3 Å. Additionally, the films were superconductive as-deposited and had a superconducting critical temperature (<i>T</i> <sub><i>c</i></sub> ) of 14.5 K after annealing at 950 °C. This work expands the range of TMCNs deposited by ALD and demonstrates the applicability of ALD for thin film materials with a high <i>T</i> <sub><i>c</i></sub> .

Chemistry of MaterialsVol. 37(17)
University of Helsinki (FI), Institute of Microelectronics (CN), VTT Technical Research Centre of Finland (FI)
Openalex Percentile: Top 80%
Semiconductor materials and devices
DOIOpen Access PDFOpenAlex
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Atomic Layer Deposition of Superconductive Niobium Carbonitride Thin Films — Paloma Ruiz Kärkkäinen, Kestutis Grigoras, et al. · Chemistry of Materials (2025) | TGRS Research Map | TGRS