Investigation of the Effect of Titanium Doping on the Physical Properties of SnS Thin Films Prepared via Chemical Spray Pyrolysis

This study systematically examined the effects of titanium (Ti) doping on the structural, morphological, and optical properties of SnS thin films prepared via chemical spray pyrolysis (CSP). X-ray diffraction (XRD) analysis confirmed that all films retained a polycrystalline orthorhombic structure, with the (021) plane remaining dominant regardless of Ti concentration (0, 2 and 4 at.%). Ti incorporation led to an increase in crystallite size from 16.22 nm for pure SnS to 23.61 nm at 4% Ti. Additionally, dislocation density decreased with doping, indicating fewer defects and potential improvements in charge carrier mobility. Atomic force microscopy (AFM) revealed that increasing Ti content reduced surface roughness from 7.75 nm to 4.21 nm and decreased particle size from 44.42 nm to 31.00 nm. Optically, Ti doping caused a slight narrowing of the bandgap from 1.65 eV to 1.55 eV. Transmittance decreased from 94% to 87%., while the extinction coefficient and refractive index also declined.

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Publication Details

Journal
International Journal of Scientific Research in Science Engineering and Technology
Published
2025-08-12
DOI
https://doi.org/10.32628/ijsrset2512528
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Investigation of the Effect of Titanium Doping on the Physical Properties of SnS Thin Films Prepared via Chemical Spray Pyrolysis

Hiba S. Rasheed
International Journal of Scientific Research in Science Engineering and Technology
Chalcogenide Semiconductor Thin Films
article

Investigation of the Effect of Titanium Doping on the Physical Properties of SnS Thin Films Prepared via Chemical Spray Pyrolysis

Hiba S. Rasheed
article en

Abstract

This study systematically examined the effects of titanium (Ti) doping on the structural, morphological, and optical properties of SnS thin films prepared via chemical spray pyrolysis (CSP). X-ray diffraction (XRD) analysis confirmed that all films retained a polycrystalline orthorhombic structure, with the (021) plane remaining dominant regardless of Ti concentration (0, 2 and 4 at.%). Ti incorporation led to an increase in crystallite size from 16.22 nm for pure SnS to 23.61 nm at 4% Ti. Additionally, dislocation density decreased with doping, indicating fewer defects and potential improvements in charge carrier mobility. Atomic force microscopy (AFM) revealed that increasing Ti content reduced surface roughness from 7.75 nm to 4.21 nm and decreased particle size from 44.42 nm to 31.00 nm. Optically, Ti doping caused a slight narrowing of the bandgap from 1.65 eV to 1.55 eV. Transmittance decreased from 94% to 87%., while the extinction coefficient and refractive index also declined.

International Journal of Scientific Research in Science Engineering and TechnologyVol. 12(4)
Mustansiriyah University (IQ)
Openalex Percentile: Top 80%
Chalcogenide Semiconductor Thin Films
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