Research Progress of Microstructure Regulation on the Electrical Properties of PZT Ferroelectric Films

Abstract Lead zirconate titanate (PbZr x Ti 1- x O 3 , PZT) ferroelectric films possess remarkable characteristics such as high residual polarization, high dielectric constant, and high piezoelectric coefficient and have great application prospects in modern electronics, communications, medical care, and military fields. At present, the microstructure changes of PZT ferroelectric thin films have a significant impact on their electrical properties. Therefore, this work summarizes the influences of geometric structure (thickness, porosity), composition structure (Zr/Ti ratio, doping), and grain structure (grain size, grain boundaries, orientation) on the electrical properties of PZT ferroelectric thin films. The results show that the changes in thickness and porosity have a significant impact on the electrical properties of PZT ferroelectric films. Especially, the actual application scenarios and preparation processes determine the required geometric dimensions and structures of PZT ferroelectric films. The Zr/Ti ratio and doping mainly affect the electrical properties by influencing the phase composition of PZT ferroelectric films. The changes in grain size, boundary structure, and orientation dependence mainly have a certain degree of influence on the domain response and domain switching behavior of PZT ferroelectric thin films. In conclusion, different structures have different influence effects on the dielectric, ferroelectric, and piezoelectric properties of PZT ferroelectric films. The way the tiny structure affects how PZT thin films work was shown, helping to guide the design of ferroelectric thin film devices. In order to further study and apply piezoelectric ceramic devices, it is crucial to have an in-depth understanding of the relationship between the structure and performance of piezoelectric ceramic devices.