Behavioral SPICE model for memristive crosspoint arrays operating in the nonlinear transport regime
• A behavioral SPICE model for crosspoint arrays is reported. • The model is based on the memdiode model for resistive switching devices. • The structure can be used in different operation modes depending on the attached circuitry: voltage-controlled voltage source or voltage-controlled current source. In this letter, a fully behavioral SPICE model for M × N memristive crosspoint arrays (CPAs) is presented. The proposed approach incorporates the current–voltage characteristics of the memdiode model for resistive switching devices, which can account for both the linear (low-voltage) and nonlinear (high-voltage) transport regimes of memristors. At low voltages, the model coincides with the conventional linear formulation based on matrix–vector multiplication (MVM) method. At high voltages, however, this algebraic operation is no longer valid. The model supports two operation modes depending on the requirements of the surrounding circuitry: voltage-controlled current source (VCCS) and voltage-controlled voltage source (VCVS). Current-controlled modes are also feasible for specific applications. Basic guidelines for applying these different modes are provided.
Authors
- E. Miranda (ORCID: https://orcid.org/0000-0003-0470-5318)
- J. Suñé (ORCID: https://orcid.org/0000-0003-0108-4907)
- Rodrigo Picos (ORCID: https://orcid.org/0000-0002-9167-6422)
Institutions
- Universitat Autònoma de Barcelona (ES)
- Fundació Universitat-Empresa de les Illes Balears (ES)
- Universitat de les Illes Balears (ES)
Publication Details
- Journal
- Solid-State Electronics
- Published
- 2025-08-18
- DOI
- https://doi.org/10.1016/j.sse.2025.109214
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministerio de Ciencia e Innovación
- Agencia Estatal de Investigación