Ablation and carbonization effects of femtosecond-picosecond pulsed laser processing on different 4H-SiC materials

Ultra-short pulsed lasers are critical for the precision machining of silicon carbide (SiC) due to their non-thermal processing capabilities. This paper investigates the processing characteristics of ultra-short pulsed lasers with non-thermal effects on different SiC materials. By combining Raman spectral mapping with spatially resolved analysis, we experimentally determined the laser-induced ablation thresholds (LIATs) and laser-induced carbonization thresholds (LICTs) for both high-purity SiC and N-doped SiC surfaces under various pulse durations. The accuracy of these experimental methods was validated using the two-temperature model. This research provided reliable threshold test methods to control ablation and carbonization of SiC surfaces, and systematically investigated the relationship between the LIATs and the LICTs of different SiC materials. It provides reliable information for the precision machining of various SiC surfaces.