Vortex Beam Lasing from III‐V Nanowires Epitaxially Grown on Silicon‐on‐Insulator
Abstract Photonic crystal lasers can be used to achieve high emission powers with exceptional beam quality. Vortex beams carrying orbital angular momentum have found applications in areas such as free space communication, optical trapping, and microscopy. In this paper, the growth and operation of an epitaxially grown InGaAs nanowire photonic crystal laser on silicon on insulator, emitting a vortex beam, are investigated. The device is composed of a honeycomb array of nanowires, with compressed and expanded configurations to make use of the band inversion phenomenon. The resulting bound‐state‐in‐the‐continuum modes are characterized using simulations and confirmed by measurement.
Authors
- Bogdan‐Petrin Ratiu (ORCID: https://orcid.org/0000-0001-7245-232X)
- Nicolae C. Panoiu (ORCID: https://orcid.org/0000-0001-5666-2116)
- Ji Tong Wang (ORCID: https://orcid.org/0009-0005-5693-1749)
- Andreas Rosenauer (ORCID: https://orcid.org/0000-0003-4742-0451)
- Tim Grieb (ORCID: https://orcid.org/0000-0002-3054-6181)
- Sang Soon Oh (ORCID: https://orcid.org/0000-0003-3093-7016)
- Kyle S Netherwood
- Qiang Li (ORCID: https://orcid.org/0000-0001-6875-7403)
Institutions
- University of Bremen (DE)
- University College London (GB)
- Cardiff University (GB)
Publication Details
- Journal
- Laser & Photonics Review
- Published
- 2025-08-18
- DOI
- https://doi.org/10.1002/lpor.202501297
- Primary Topic
- Near-Field Optical Microscopy
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Cardiff University
- Engineering and Physical Sciences Research Council
- European Regional Development Fund