The Comprehensive Study of TiO2 Blocking Layer with Complementary Electrochemical and SPM Methods for the Application in Photovoltaics

The blocking layer is crucial for inhibiting recombination processes in photovoltaics that utilize oxide semiconductors, such as dye-sensitized solar cells (DSSCs), quantum-dot-sensitized solar cells (QDSSCs), and perovskite solar cells. However, its effectiveness strongly depends on the chosen deposition method. This study systematically evaluates the most suitable approach for obtaining a uniform, pinhole-free titanium dioxide (TiO2) blocking layer by using three deposition methods: radio-frequency sputtering, spin-coating, and chemical bath deposition. The electrochemical, optical, and morphological properties of blocking layers were characterized using cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS), UV-VIS spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), and Kelvin probe force microscopy (KPFM). KPFM analysis, together with CV and EIS, revealed that the lower Rct values and higher CV currents observed in spin-coated (SC_11-33) and vertically deposited CBD films (CB_5, CB_6) resulted from incomplete FTO coverage. In contrast, sputtered (SP_21-24) and horizontally deposited CBD films (CB_1, CB_2) demonstrated significantly higher Rct values and improved surface coverage. Full DSSCs fabricated with SP_23, SC_33, and CB_2 confirmed the correlation between interfacial properties and photovoltaic performance. This combined approach offers a fast, material-efficient, and environmentally conscious screening method for optimizing blocking layers in solar cell technologies.