Growth of Cubic Boron Nitride Thin Film on Diamond Surface

High-power electronics demand high-speed, highly integrated electrical circuits with excellent heat dissipation. Owing to their ultrawide-bandgap, high thermal stability and chemical inertness, the heterostructure of cubic boron nitride (c-BN) and diamond are predicted as promising power-efficient materials for next-generation electronics. Therefore, extensive efforts are ongoing to develop epitaxial c-BN thin films on diamond with an atomically smooth interface, however with limited success due to the metastable nature of c-BN. Here, c-BN thin films are grown on (001) single crystal diamond substrates. Exhaustive spectroscopic and microscopic characterizations reveal a near-epitaxial growth of ultrathin (≈2 nm) c-BN films on nitrogen functionalized diamond surfaces. However, the top surface of the films shows amorphous nature, possibly due to lattice relaxations as it is more energetically favorable than the cubic phase. Further, observed strain mediated epitaxy of few-layer c-BN film has been corroborated with the first principle density functional theory (DFT) calculations, confirming that the modified diamond surface increases stability by reducing the energy barriers associated with c-BN growth and favors the near-interface epitaxy. The observations may offer valuable insights for fully epitaxial c-BN films on diamond, important for high-power electronics.

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Publication Details

Journal
Small
Published
2025-08-18
DOI
https://doi.org/10.1002/smll.202506840
Citations
2
Primary Topic
Boron and Carbon Nanomaterials Research
Type
article
Field-Weighted Citation Impact
1.04

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article

Growth of Cubic Boron Nitride Thin Film on Diamond Surface

Tanguy Terlier, A. Glen Birdwell, Xiang Zhang, Arunima K. Singh et al.
2 citations
Small
Boron and Carbon Nanomaterials Research
1.04
article

Growth of Cubic Boron Nitride Thin Film on Diamond Surface

Tanguy Terlier, A. Glen Birdwell, Xiang Zhang, Arunima K. Singh, Bradford B. Pate, Cody L. Milne, Pulickel M. Ajayan, Mahesh R. Neupane, Elias Garratt, Anand B. Puthirath, Abhijit Biswas, Tia Gray, Tony Ivanov, Tymofii S. Pieshkov, Chenxi Li, Hector Gomez
article en
2 citations

Abstract

High-power electronics demand high-speed, highly integrated electrical circuits with excellent heat dissipation. Owing to their ultrawide-bandgap, high thermal stability and chemical inertness, the heterostructure of cubic boron nitride (c-BN) and diamond are predicted as promising power-efficient materials for next-generation electronics. Therefore, extensive efforts are ongoing to develop epitaxial c-BN thin films on diamond with an atomically smooth interface, however with limited success due to the metastable nature of c-BN. Here, c-BN thin films are grown on (001) single crystal diamond substrates. Exhaustive spectroscopic and microscopic characterizations reveal a near-epitaxial growth of ultrathin (≈2 nm) c-BN films on nitrogen functionalized diamond surfaces. However, the top surface of the films shows amorphous nature, possibly due to lattice relaxations as it is more energetically favorable than the cubic phase. Further, observed strain mediated epitaxy of few-layer c-BN film has been corroborated with the first principle density functional theory (DFT) calculations, confirming that the modified diamond surface increases stability by reducing the energy barriers associated with c-BN growth and favors the near-interface epitaxy. The observations may offer valuable insights for fully epitaxial c-BN films on diamond, important for high-power electronics.

SmallVol. 21(40)
University of California, Riverside (US), United States Naval Research Laboratory (US), DEVCOM Army Research Laboratory (US), United States Army Combat Capabilities Development Command (US), Arizona State University (US), Rice University (US)
National Science Foundation, U.S. Department of Energy, Office of Science, Basic Energy Sciences, Army Research Office, Energy Frontier Research Centers
Affordable and clean energy
Openalex Percentile: Top 23%
Boron and Carbon Nanomaterials Research
1.04
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