From Shadows to Signatures: Interpreting Bypass Diode Faults in PV Modules Under Partial Shading Through Data-Driven Models

Bypass diode faults are among the most hard-to-detect but impactful anomalies in photovoltaic (PV) systems, especially under partial shading conditions, where their electrical signatures often resemble those caused by non-critical irradiance variations. This study presents a systematic simulation-based investigation into how different bypass diode fault types—short-circuited, open-circuited, and healthy—affect the electrical behavior of PV strings under diverse irradiance profiles. A high-resolution MATLAB/Simulink model is developed to simulate 27 unique diode fault configurations across multiple shading scenarios, enabling the extraction of key features from resulting I–V curves. These features include global and local maximum power point parameters, open-circuit voltage, and short-circuit current. To address the challenge of feature redundancy and classification ambiguity, a preprocessing step is applied to remove near-duplicate instances and improve model generalization. An artificial neural network (ANN) model is then trained to classify the number of faulty bypass diodes based on these features. Comparative evaluations are conducted with support vector machines and random forests. The results indicate that the ANN achieves the highest test accuracy (93.57%) and average AUC (0.9925), outperforming other classifiers in both robustness and discriminative power. These findings highlight the importance of feature-informed, data-driven approaches for fault detection in PV systems and demonstrate the feasibility of diode fault classification without precise fault localization.