Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC

Abstract Channeling ion implantation has attracted attention in the fabrication of 4H-SiC devices because of the capability of deep ion implantation with relatively low acceleration energy. In the case of the channeling to the crystal axes 〈0001〉 of 4H-SiC, there are two directions: [0001] and [000-1]. In this work, we performed channeling Al ion implantation to the [0001] and [000-1] directions in 4H-SiC by implantation to the Si- or C-faces. The results show that the number of channeled ions to the [000-1] direction is larger compared to the case for implantation to the [0001] direction. Therefore, when we employ channeling Al ion implantation for 4H-SiC device fabrication, utilization of the Si-face is preferable.