Enhancement of Energy Storage and Efficiency in Antiferroelectric Hf᙮Zr᙮₋₁O₂ Supercapacitors Through Tailored Phase Engineering by Oxygen Vacancy
In this letter, the antiferroelectric (AFE) performance of Hf<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><sub>x</sub></i>Zr<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-</sub><italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><sub>x</sub></i>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) film is significantly improved by regulating its oxygen vacancy (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>O</sub></i>). The gas with different O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> flow is used in the HZO films sputter process. Introducing appropriate O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> flow enhances both energy storage density (ESD) and efficiency (η) of the AFE HZO energy storage capacitors (ESCs). X-ray diffraction (XRD) and capacitance–electric (C–E) measurements demonstrate that the t-phase/o-phase ratio in HZO films was adjusted by regulating the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>O</sub></i> concentration to promote t-phase crystallization. The optimal crystallization of the t-phase in HZO films, achieved with 8.0% <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>O</sub></i> and 0.82 Zr concentration, results in an ESD of ~86.3 J/cm³ and an efficiency of ~74%. Moreover, we attained exceptional durability, surpassing 10⁹ cycles while maintaining 98% of the initial ESD. The results obtained herein provide a novel and effective method to achieve high-performance AFE HZO ESCs.
Authors
- Chuhao Yao
- Tiancheng Gong (ORCID: https://orcid.org/0000-0001-7259-3237)
- Xiuyi Wang (ORCID: https://orcid.org/0000-0002-8197-6229)
- Xuanxi Liu
- Pengfei Jiang (ORCID: https://orcid.org/0000-0002-7543-8651)
- Wei Wei (ORCID: https://orcid.org/0009-0002-9368-3463)
- Xiao Long (ORCID: https://orcid.org/0000-0002-3619-1318)
- Heng Ye (ORCID: https://orcid.org/0000-0001-5492-1401)
- Yuan Qiu (ORCID: https://orcid.org/0000-0002-3488-6386)
- Yuan Wang (ORCID: https://orcid.org/0000-0003-1591-6874)
- Qing Luo (ORCID: https://orcid.org/0000-0002-3419-4400)
- Xinzhong Zhu (ORCID: https://orcid.org/0000-0002-0033-5260)
- Qiang Cai (ORCID: https://orcid.org/0000-0001-7012-9887)
- Zhiquan He (ORCID: https://orcid.org/0000-0003-2255-4293)
- Guanlin Li (ORCID: https://orcid.org/0009-0004-0122-5794)
Institutions
- Chinese Academy of Sciences (CN)
- Shanghai Micro Satellite Engineering Center (CN)
- Institute of Microelectronics (CN)
- Shanghai Industrial Technology Institute (CN)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-08-18
- DOI
- https://doi.org/10.1109/led.2025.3599694
- Primary Topic
- Supercapacitor Materials and Fabrication
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Youth Innovation Promotion Association of the Chinese Academy of Sciences