High-performance digital alloy n-B-n AlInAsSb extended short-wave infrared detector

This work presents an AlInAsSb-based digital alloy n-B-n extended short-wave infrared (eSWIR) detector grown by molecular beam epitaxy (MBE) on a GaSb substrate. The device achieves a 50% cutoff wavelength of ∼2.86 <i>μ</i>m and a 100% cutoff wavelength of ∼3.5 <i>μ</i>m at room temperature. The photodetector exhibited a specific detectivity (<i>D</i><sup>∗</sup>) of 2.47 × 10<sup>10</sup> cm·Hz<sup>1/2</sup> ·W<sup>-1</sup> at 300 K (with peak responsivity at 2.61 <i>μ</i>m) at a bias voltage of -0.1 V, which improved to 1.22 × 10<sup>12</sup> cm·Hz<sup>1/2</sup> ·W<sup>-1</sup> at 160 K (with peak responsivity at 2.68 <i>μ</i>m). These results highlight the potential of AlInAsSb-based photodetectors for high sensitivity, low bias voltage operation, and compact infrared sensing systems.

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Publication Details

Journal
Optics Express
Published
2025-07-18
DOI
https://doi.org/10.1364/oe.569660
Citations
2
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
1.46

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article

High-performance digital alloy n-B-n AlInAsSb extended short-wave infrared detector

Faran Chang, Yi Shi, Ye Zhang, Dongwei Jiang et al.
2 citations
Optics Express
Advanced Semiconductor Detectors and Materials
1.46
article

High-performance digital alloy n-B-n AlInAsSb extended short-wave infrared detector

Faran Chang, Yi Shi, Ye Zhang, Dongwei Jiang, Wenguang Zhou, Yan Liang, Yingqiang Xu, Donghai Wu, Hongyue Hao, Xiangbin Su, Guo Wei Wang, Zhichuan Niu
article en
2 citations

Abstract

This work presents an AlInAsSb-based digital alloy n-B-n extended short-wave infrared (eSWIR) detector grown by molecular beam epitaxy (MBE) on a GaSb substrate. The device achieves a 50% cutoff wavelength of ∼2.86 <i>μ</i>m and a 100% cutoff wavelength of ∼3.5 <i>μ</i>m at room temperature. The photodetector exhibited a specific detectivity (<i>D</i><sup>∗</sup>) of 2.47 × 10<sup>10</sup> cm·Hz<sup>1/2</sup> ·W<sup>-1</sup> at 300 K (with peak responsivity at 2.61 <i>μ</i>m) at a bias voltage of -0.1 V, which improved to 1.22 × 10<sup>12</sup> cm·Hz<sup>1/2</sup> ·W<sup>-1</sup> at 160 K (with peak responsivity at 2.68 <i>μ</i>m). These results highlight the potential of AlInAsSb-based photodetectors for high sensitivity, low bias voltage operation, and compact infrared sensing systems.

Optics ExpressVol. 33(16)
North China Electric Power University (CN), Chinese Academy of Sciences (CN), Institute of Semiconductors (CN), University of Chinese Academy of Sciences (CN), China Electric Power Research Institute, Nanjing University (CN)
National Natural Science Foundation of China, Key Technologies Research and Development Program
Affordable and clean energy
Openalex Percentile: Top 16%
Advanced Semiconductor Detectors and Materials
1.46
DOIOpen Access PDFOpenAlex
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High-performance digital alloy n-B-n AlInAsSb extended short-wave infrared detector — Faran Chang, Yi Shi, et al. · Optics Express (2025) | TGRS Research Map | TGRS