X-Band Low-Noise Amplifier MMICs Using Wavice’s 0.2 μm GaN HEMT Process

In this paper, two types of X-band GaN low-noise amplifier(LNA) monolithic microwave integrated circuits(MMICs) are designed, fabricated, and evaluated using a 0.2 μm GaN HEMT process at Wavice foundry. The low-noise amplifier MMICs use GaN HEMTs with source degeneration microstrip lines, and insert thin-film resistors in shunt (shunt RC) or series configurations into the biasing networks for amplifier stabilization. Input matching of a two-stage amplifier MMIC is implemented to obtain a lower noise figure, and input matching of a three-stage amplifier MMIC is achieved for higher gain and better input return loss. The fabricated two-stage MMIC exhibits a linear gain of 16.2~17.3 dB, a noise figure of 1.31~1.52 dB, and an output P1dB of 26.5 dBm, while the three-stage MMIC achieves a linear gain of 22.5~24.7 dB, a noise figure of 1.67~1.77 dB, and an output P1dB of 25.5 dBm. Both LNA MMICs have a saturated output power of 32.6 dBm. Furthermore, the power measurements show that the three-stage MMIC is endurable up to the input power of 10 W. The MMIC chip dimensions are 1.6×1.5 mm² for the two-stage amplifier and 1.85×1.5 mm² for the three-stage amplifier.