A Psuedo-Differential Transimpedance Amplifier with 36 GHz Bandwidth via Inductive Peaking in 22-nm FDSOI CMOS

This paper presents a psuedo-differential inverter based transimpedance amplifier (TIA) realized in a standard 22nm FDSOI CMOS process, utilizing an inductive peaking configuration to enhance the bandwidth. Measured results demonstrate 66dBΩ trans-impedance gain, 36GHz bandwidth with a 70fF photodiode capacitance, input referred current noise density of $18pA/\sqrt {Hz}$ at midband, and 26mW power consumption.

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Published
2025-04-08
DOI
https://doi.org/10.1109/wmcs63512.2025.11104902
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A Psuedo-Differential Transimpedance Amplifier with 36 GHz Bandwidth via Inductive Peaking in 22-nm FDSOI CMOS

Kamran Entesari, Sareh Bavandi
Radio Frequency Integrated Circuit Design
article

A Psuedo-Differential Transimpedance Amplifier with 36 GHz Bandwidth via Inductive Peaking in 22-nm FDSOI CMOS

Kamran Entesari, Sareh Bavandi
article en

Abstract

This paper presents a psuedo-differential inverter based transimpedance amplifier (TIA) realized in a standard 22nm FDSOI CMOS process, utilizing an inductive peaking configuration to enhance the bandwidth. Measured results demonstrate 66dBΩ trans-impedance gain, 36GHz bandwidth with a 70fF photodiode capacitance, input referred current noise density of $18pA/\sqrt {Hz}$ at midband, and 26mW power consumption.

Texas A&M University (US)
Affordable and clean energy
Openalex Percentile: Top 81%
Radio Frequency Integrated Circuit Design
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A Psuedo-Differential Transimpedance Amplifier with 36 GHz Bandwidth via Inductive Peaking in 22-nm FDSOI CMOS — Kamran Entesari, Sareh Bavandi · (2025) | TGRS Research Map | TGRS