Effect of doping on the physical properties of CdSe nano particles and thin films with different metals ions in definite proportion

This comprehensive study examines the effects of various dopants on the physical and chemical properties of cadmium selenide (CdSe) nanoparticles and thin films. Through systematic analysis of experimental data from recent research, it is revealed that how dopant incorporation fundamentally alters structural, optical, magnetic and electrical characteristics of CdSe-based materials. Key findings reveal that doping concentration significantly influences band gap engineering (1.14-2.61 eV range), magnetic behavior (from diamagnetic to ferromagnetic) and morphological-structural properties. This review consolidates experimental evidence from multiple characterization techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, photoluminescence (PL) tunneling electron microscopy (TEM) and magnetic measurements to provide details about the dopant-induced property alterations and modifications.

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Publication Details

Journal
Journal of Emerging Technologies and Innovative Research
Published
2025-01-01
DOI
https://doi.org/10.56975/jetir.v12i8.567692
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Effect of doping on the physical properties of CdSe nano particles and thin films with different metals ions in definite proportion

Rohit Srivastava, C.K. Gupta
4 links
Journal of Emerging Technologies and Innovative Research
Chalcogenide Semiconductor Thin Films
article

Effect of doping on the physical properties of CdSe nano particles and thin films with different metals ions in definite proportion

Rohit Srivastava, C.K. Gupta
article en

Abstract

This comprehensive study examines the effects of various dopants on the physical and chemical properties of cadmium selenide (CdSe) nanoparticles and thin films. Through systematic analysis of experimental data from recent research, it is revealed that how dopant incorporation fundamentally alters structural, optical, magnetic and electrical characteristics of CdSe-based materials. Key findings reveal that doping concentration significantly influences band gap engineering (1.14-2.61 eV range), magnetic behavior (from diamagnetic to ferromagnetic) and morphological-structural properties. This review consolidates experimental evidence from multiple characterization techniques including X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, photoluminescence (PL) tunneling electron microscopy (TEM) and magnetic measurements to provide details about the dopant-induced property alterations and modifications.

Journal of Emerging Technologies and Innovative ResearchVol. 12(8)
Openalex Percentile: Top 81%
Chalcogenide Semiconductor Thin Films
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Effect of doping on the physical properties of CdSe nano particles and thin films with different metals ions in definite proportion — Rohit Srivastava, C.K. Gupta · Journal of Emerging Technologies and Innovative Research (2025) | TGRS Research Map | TGRS