Functionalization of Si <sub>3</sub> N <sub>4</sub> with an aldehyde inhibitor for area selective deposition of HfO <sub>2</sub> and SiO <sub>2</sub>
Authors
- Byungchan Lee (ORCID: https://orcid.org/0000-0001-8917-9489)
- Youngho Kang (ORCID: https://orcid.org/0000-0003-4532-0027)
- Chi Thang Nguyen (ORCID: https://orcid.org/0000-0001-8379-7315)
- Han‐Bo‐Ram Lee (ORCID: https://orcid.org/0000-0002-0097-6738)
- Seungwon Shim
- Aravind H. Patil
- Soo‐Hyun Kim (ORCID: https://orcid.org/0000-0003-3748-2755)
- Trinh Ngoc Le (ORCID: https://orcid.org/0000-0002-6360-3306)
Institutions
- Incheon National University (KR)
- Daegu Gyeongbuk Institute of Science and Technology (KR)
- Ulsan National Institute of Science and Technology (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01969a
- Citations
- 2
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 1.46