Interface engineering of 2D van der Waals heterostructures for high-temperature optical communication
We employed hBN encapsulated MoS 2 and WSe 2 /MoS 2 p–n junctions, resulting in enhanced operation stability at temperatures above 500 K. These findings can pave the way for the development of 2D FETs and photodiodes in extreme environments.
Authors
- Xueqian Sun (ORCID: https://orcid.org/0000-0002-0165-0481)
- Yi Shi (ORCID: https://orcid.org/0000-0002-1082-0315)
- Youwen Liu (ORCID: https://orcid.org/0000-0002-0819-1839)
- Linglong Zhang (ORCID: https://orcid.org/0000-0001-7562-8642)
- Fan Yang (ORCID: https://orcid.org/0000-0002-5972-5466)
- Shafqat Hussain (ORCID: https://orcid.org/0000-0003-3415-5847)
- Haizeng Song
- Shunshun Yang
- Yimin Cui
Institutions
- Australian National University (AU)
- Zhoukou Normal University (CN)
- Numerical Method (China) (CN)
- Nanjing University (CN)
- Nanjing University of Aeronautics and Astronautics (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc02092a
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00