Indium-Doped ZnO Thin Films Obtained Using Spray Pyrolysis for Position-Sensitive Photodetection

The main goal of this study was to investigate the properties of ZnO thin films, including pure films and those doped with indium (up to 8 mol%) that was deposited using a spray pyrolysis technique on glass and silicon substrates in order to prepare the position-sensitive structure, Si-SiO₂-ZnO:In. To this aim, the present work is focused on investigating the effect of indium concentration on the morphology, structure, and optical properties of the films. X-ray diffraction (XRD) analysis reveals a wurtzite polycrystalline structure. Scanning electron microscopy (SEM) images display a smooth and uniform surface characterized by closely packed nanocrystalline clusters. As the indium concentration rises to 8 mol%, the number of nuclei grows, resulting in uniformly distributed grains across the entire substrate surface. The estimated root mean square (RMS) roughness values for the thin films undoped and doped with 3 mol%, 5 mol%, and 8 mol% of ZnO measured using AFM are 6.13, 9.64, and 13.76 nm, respectively. The increase in indium concentration leads to a slight decrease in film transmittance. The measured LPV photosensitivity of about 44 mV/mm confirms the potential use of these thin films in practical applications.