InGaN/GaN/AlN P-Channel MOS-HFETs with InAlGaN Back-Barrier and Multi-Finger Drain Field-Plate

This work reports novel InGaN/GaN/AlN p-channel metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) with InAlGaN back-barrier and multi-finger drain field-plate (MF-DFP). The present design has achieved a record-high three-terminal on-state drain-source breakdown voltage ( BV DS ) of −890 V. A low specific on-resistance ( R on,sp ) of 26.3 Ω-cm 2 was obtained by implementing an Mg-doped p ++ -InGaN capper. A high-k and wide-gap Al 2 O 3 was deposited as gate dielectric and surface passivation at the same time by using a non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique. Devices with conventional DFP (C-DFP) and without DFP have been studied in comparison. The present design with MF-DFP (C-DFP/without DFP) has demonstrated superior maximum drain-source current density ( I DS, max ) of −18.1 (−17.3/−19.5) mA/mm, on/off current ratio ( I on / I off ) of 2.0 × 10 7 (1.5 × 10 7 /1.1 × 10 6 ), two-terminal off-state gate-drain breakdown voltage ( BV GD ) of 925 (850/680) V, and BV DS of −890 (−805/−640) V, respectively. The present design is promising for high-voltage complementary power-switching circuit applications.