Study on the effects of rotational and heating methods on the melt flow and crystal growth rate in SiC growth systems by the TSSG method
The top-seeded solution growth (TSSG) method facilitates the production of large-sized silicon carbide (SiC) single crystals with low defect density.
Authors
- Minpeng Lei
- Hao Yang (ORCID: https://orcid.org/0000-0001-8664-4613)
- Mengmeng Yuan
- Guangxin Zhang (ORCID: https://orcid.org/0000-0001-5339-0426)
- Wenhui Ma (ORCID: https://orcid.org/0000-0002-6340-8412)
- Tai Li (ORCID: https://orcid.org/0000-0002-8481-2545)
- Guoqiang Lv (ORCID: https://orcid.org/0009-0000-2763-5557)
Institutions
- Kunming University of Science and Technology (CN)
- Yunnan University (CN)
- Yunnan Metallurgical Group (China) (CN)
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00418g
- Citations
- 1
- Primary Topic
- Silicon and Solar Cell Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73