Spatially Deterministic Integration of hBN Single‐Photon Emitters on SiN Waveguides Via Femtosecond Laser Processing

Abstract A post‐fabrication method is demonstrated that enables spatially deterministic integration of hexagonal boron nitride (hBN) single‐photon emitters onto silicon nitride (SiN) waveguides. Mechanically exfoliated hBN flakes are dry‐transferred onto pre‐fabricated SiN waveguides, and localized femtosecond laser irradiation is employed to induce defects with sub‐microscale spatial precision. Confocal photoluminescence mapping reveals multiple laser‐written bright defects, among which one emitter exhibits narrow spectral linewidth and polarization dependence characteristic of a dipole emitter. The emitter exhibits high brightness and temporal stability, and second‐order photon correlation measurements confirm its single‐photon nature. Furthermore, on‐chip excitation via the SiN waveguide is successfully achieved, demonstrating the compatibility of the approach with mature photonic platform technologies. This deterministic integration technique offers a scalable pathway for incorporating quantum emitters into photonic circuits, paving the way for the development of quantum information processing and communication systems with 2D material hybrid photonic devices.