The Role of Cation Deficiency and Impurities in the Formation of Photosensitivity Centers in CdIn2S4 Compound

Optical quenching of photocurrent, the dependence of the quenching magnitude on the wavelength of the additional quenching light, and temperature were studied in stoichiometric, nonstoichiometric, and copper-doped CdIn2S4 samples. It was shown that a deficiency of cadmium and indium in CdIn2S4 does not change the energy distance of slow recombination centers from the valence band top ( $$E_{{{\text{vr}}}}^{{\text{0}}}$$ = 0.73 eV for both undoped samples and those with cadmium and indium deficiency), whereas doping the crystals with copper leads to a slight increase in this energy distance ( $$E_{{{\text{vr}}}}^{{\text{0}}}$$ = 0.86 eV).