Effect of Temperature and Phosphoros Concentration on the Optoelectronic Properties of AlAs1–xPx Alloys

The electronic and optical properties of AlAs1–xPx under the influence of phosphorous concentration at various values of temperature have been studied. The optical lattice vibration frequencies in zinc-blende AlAs1–xPx have been investigated based on a pseudopotential method (EPM) under the virtual crystal approximation (VCA). It is demonstrated that the composition dependency of energy bandgaps is non-linear. It is discovered that the AlAs1–xPx is an indirect semiconductor alloy in the range x = 0–1. Overall, our results demonstrated an acceptably high degree of agreement with published data. The findings collected in this study could be useful for photonic technological uses.