Ferroelectricity of wurtzite Al1<b>−</b> <i>x</i>Hf<i>x</i>N heterovalent alloys

Thin films of aluminum hafnium nitride (Al1−xHfxN) were synthesized via reactive magnetron sputtering for Hf contents up to x = 0.13. X-ray diffraction showed a single c-axis oriented wurtzite phase for all films. Hard x-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d33,f,meas measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent–and not just trivalent–alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.

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Publication Details

Journal
Applied Physics Letters
Published
2025-08-11
DOI
https://doi.org/10.1063/5.0271563
Citations
2
Primary Topic
Acoustic Wave Resonator Technologies
Type
article
Field-Weighted Citation Impact
1.35

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article

Ferroelectricity of wurtzite Al1− xHfxN heterovalent alloys

Nicole J. Bernstein, Cheng‐Wei Lee, Keisuke Yazawa, Brendan Hanrahan et al.
2 citations
Applied Physics Letters
Acoustic Wave Resonator Technologies
1.35
article

Ferroelectricity of wurtzite Al1− xHfxN heterovalent alloys

Nicole J. Bernstein, Cheng‐Wei Lee, Keisuke Yazawa, Brendan Hanrahan, Glen R. Fox, Prashun Gorai, Daniel Drury, Geoff L. Brennecka, Lutz Baumgarten, Oliver Rehm, Martina Müller, Toshihiro Shimada, Yoshiki Iwazaki, Yuki Sakai
article en
2 citations

Abstract

Thin films of aluminum hafnium nitride (Al1−xHfxN) were synthesized via reactive magnetron sputtering for Hf contents up to x = 0.13. X-ray diffraction showed a single c-axis oriented wurtzite phase for all films. Hard x-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d33,f,meas measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent–and not just trivalent–alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.

Applied Physics LettersVol. 127(6)
National Laboratory of the Rockies (US), Rensselaer Polytechnic Institute (US), DEVCOM Army Research Laboratory (US), Colorado School of Mines (US), Forschungszentrum Jülich (DE), Taiyo Yuden (Japan) (JP), University of Konstanz (DE), United States Army Combat Capabilities Development Command (US), Colorado Engineering (United States) (US)
National Science Foundation, Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung, DEVCOM Army Research Laboratory
Openalex Percentile: Top 18%
Acoustic Wave Resonator Technologies
1.35
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