High-performance pulsed light detector based on the transverse thermoelectric effect of the <i>c</i>-axis inclined BiCuTeO:Ag<i>x</i> films

The transverse thermoelectric (TTE) effect, arising from the anisotropic Seebeck coefficient of a material, demonstrates significant potential for applications in rapid-response pulsed light detection. In this work, high-sensitivity TTE voltages were obtained in c-axis tilted BiCuTeO:Agx films prepared using pulsed laser deposition technology. Under the irradiation of 308 nm pulsed lasers, the film with x = 1.5 at. % demonstrated TTE voltages with an amplitude of 40 V, accompanied by a normalized sensitivity of 2 (V/mJ)/mm2, rise and decay times of 52 and 195 ns, respectively. The normalized sensitivity surpasses that of numerous materials used for TTE effect investigation. These TTE voltages, characterized by high sensitivity, rapid response times, and stable performance, underscore the potential applicability of the BiCuTeO:Agx films in high-performance self-powered ultraviolet pulsed light detection.