High-performance optoelectronic memory based on the MoS₂/h-BN/InSe van der Waals heterostructure

High-performance optoelectronic memory, which integrates optical sensing, optical/electrical information storage, and computation, plays a significant role in next-generation data processing, such as neuromorphic computing. Indium selenide (InSe) exhibits high carrier mobility, a large density of states, and a sensitive photoresponse, making it promising for the construction of optoelectronic memories. Herein, we demonstrate a high-performance optoelectronic floating-gate (FG) memory based on MoS 2 /h-BN/InSe van der Waals heterostructure, where InSe serves as the FG layer. This optoelectronic FG memory exhibits a maximum on/off ratio of 10 9 , a large memory window ratio of 90.7%, excellent retention stability exceeding 10 4 s, optical power-modulated volatile/non-volatile optoelectronic storage, and electrically/optically tunable multi-level memory. By leveraging the electrical/optical stimuli and photoelectric-coupling effect, we simulate optical power-dependent short-/long-term synaptic plasticity, demonstrate optically/electrically programming/erasing operation, and realize the positive/negative photoconductance behavior. Combined with the artificial neural network algorithm, we demonstrate high-accuracy handwritten digit recognition. The demonstrated optoelectronic memory shows the potential to meet the requirements of complicated computation tasks in the era of big data.