Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)
4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with α particles from a 84 210 Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.
Authors
- Spyridon Pavlidis (ORCID: https://orcid.org/0000-0002-1690-2581)
- John F. Muth (ORCID: https://orcid.org/0000-0002-2488-7721)
- S. Holland (ORCID: https://orcid.org/0000-0001-7218-3457)
- Yashas Satapathy (ORCID: https://orcid.org/0000-0002-9859-2838)
- Philip Barletta
- C. Haber (ORCID: https://orcid.org/0000-0002-0155-1360)
- Ben J. Sekely (ORCID: https://orcid.org/0009-0001-8894-1926)
- Tao Yang (ORCID: https://orcid.org/0000-0003-2161-5808)
- S. A. Stucci (ORCID: https://orcid.org/0000-0002-1639-4484)
- Greg Allion
Institutions
- North Carolina State University (US)
- Lawrence Berkeley National Laboratory (US)
- Brookhaven National Laboratory (US)
Publication Details
- Journal
- Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
- Published
- 2025-08-11
- DOI
- https://doi.org/10.1016/j.nima.2025.170873
- Citations
- 4
- Primary Topic
- Particle Detector Development and Performance
- Type
- article
- Field-Weighted Citation Impact
- 7.48
Funders
- National Science Foundation
- U.S. Department of Energy
- Office of Science
- High Energy Physics