Breakdown and polarization contrasts in ferroelectric devices observed by operando laser-based photoemission electron microscopy with the AC/DC electrical characterization system

We have developed an operando laser-based photoemission electron microscope (laser-PEEM) with a ferroelectric characterization system. A Sawyer-Tower circuit was implemented to measure the polarization-voltage (P-V) characteristics of ferroelectric devices. Using this system, we successfully obtained the well-defined P-V hysteresis loops for a ferroelectric capacitor incorporating Hf_0.5Zr_0.5O₂ (HZO), reproducing the typical field-cycling characteristics of HZO capacitors. After dielectric breakdown caused by field-cycling stress, we visualized a conduction filament through the top electrode without any destructive processing. Additionally, we successfully observed polarization contrast through the top electrode of an oxide semiconductor (InZnO_x). These results indicate that our operando laser-PEEM system is a powerful tool for visualizing conduction filaments after dielectric breakdown, the ferroelectric polarization contrasts, and electronic state distribution of materials implemented in ferroelectric devices, including ferroelectric field-effect transistors and ferroelectric tunnel junctions.