Initial study on performance enhancement of using FeS2 back surface field and antireflective layers in CZTS solar cells

Abstract This investigation advances kesterite photovoltaic technology through optimized Cu₂ZnSnS₄ (CZTS) absorber design, capitalizing on its earth-abundant and eco-friendly characteristics. Although CZTS devices with CdS buffers are currently limited to a certified efficiency of 13.44% (well below the standards of CIGS/CdTe), we demonstrate that integrating a FeS 2 back surface field offers a promising alternative pathway for enhancing efficiency. Our spray pyrolysis synthesis yields uniform CZTS nanostructures, with gamma irradiation studies revealing dose-dependent modifications. Numerical simulations using Silvaco TCAD confirmed notable performance improvements in the engineered Al/ARC/FTO/ZnO/CZTS/FeS₂/Mo architecture, achieving a short-circuit current density (J sc ) of 17.70 mA/cm², open-circuit voltage (V oc ) of 1.20 V, fill factor (FF) of 85.32%, and overall power conversion efficiency (PCE) of 18.06%. These findings establish a new paradigm for high-efficiency, sustainable thin-film photovoltaics.

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Publication Details

Journal
Discover Applied Sciences
Published
2025-08-11
DOI
https://doi.org/10.1007/s42452-025-07576-z
Citations
3
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.19
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article

Initial study on performance enhancement of using FeS2 back surface field and antireflective layers in CZTS solar cells

Najoua Kamoun‐Turki, Ruxandra Vidu, Olfa Kamoun, Anis Akkari et al.
3 citations
Discover Applied Sciences
Chalcogenide Semiconductor Thin Films
2.19
article

Initial study on performance enhancement of using FeS2 back surface field and antireflective layers in CZTS solar cells

Najoua Kamoun‐Turki, Ruxandra Vidu, Olfa Kamoun, Anis Akkari, Badriyah Alhalaili, Haikel Jelassi
article en
3 citations

Abstract

Abstract This investigation advances kesterite photovoltaic technology through optimized Cu₂ZnSnS₄ (CZTS) absorber design, capitalizing on its earth-abundant and eco-friendly characteristics. Although CZTS devices with CdS buffers are currently limited to a certified efficiency of 13.44% (well below the standards of CIGS/CdTe), we demonstrate that integrating a FeS 2 back surface field offers a promising alternative pathway for enhancing efficiency. Our spray pyrolysis synthesis yields uniform CZTS nanostructures, with gamma irradiation studies revealing dose-dependent modifications. Numerical simulations using Silvaco TCAD confirmed notable performance improvements in the engineered Al/ARC/FTO/ZnO/CZTS/FeS₂/Mo architecture, achieving a short-circuit current density (J sc ) of 17.70 mA/cm², open-circuit voltage (V oc ) of 1.20 V, fill factor (FF) of 85.32%, and overall power conversion efficiency (PCE) of 18.06%. These findings establish a new paradigm for high-efficiency, sustainable thin-film photovoltaics.

Discover Applied SciencesVol. 7(8)
Tunis University (TN), American Academy of Arts and Sciences (US), Kuwait Institute for Scientific Research (KW), Higher Institute of Management (RU), Centre National des Sciences et Technologies Nucléaires (TN), Universitatea Națională de Știință și Tehnologie Politehnica București (RO), Tunis El Manar University (TN), Manouba University (TN)
Industry, innovation and infrastructure
Openalex Percentile: Top 11%
Chalcogenide Semiconductor Thin Films
2.19
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