Efficiency Enhancement and EMI Mitigation in GaN-HEMTs Using a Single-Switch Resonant Gate Driver Circuit

This article addresses the critical challenge of enhancing gate driving efficiency and electromagnetic interference (EMI) suppression in gallium nitride high electron mobility transistors (GaN-HEMTs), particularly under high-frequency operation. Conventional gate driver topologies, such as current source resonant gate driver (CSRGD) and time-segmented resonant gate driver (TSRGD), face significant limitations, including excessive power losses, complex circuit architectures, and high EMI due to abrupt switching transitions and poor energy recovery. In order to overcome these challenges, a single-switch resonant gate driver (SSRGD) circuit is proposed that employs a resonance-based energy recovery mechanism and achieves zero-voltage switching (ZVS). This design minimises switching losses, ensures smooth transitions, and reduces EMI while simplifying the driver circuitry. The SSRGD achieves a superior efficiency of 96.25%, outperforming CSRGD (89.71%) and TSRGD (93.56%), as validated through both LTspice simulations and experimental measurements. The results demonstrate significant improvements in switching transient behaviour, EMI mitigation, and energy efficiency, positioning the SSRGD as a practical and robust solution for GaN-based high-frequency power electronics and consumer electronics applications.