Adsorption Mechanism and Electronic Behavior of Pd- and Pt-Modified SnS₂ in Detection and Adsorption of Characteristic Gases for Oil
This study utilizes DFT to explore how doping SnS2-based gas sensors with Pd and Pt atoms influences their sensing performance. A comprehensive analysis was conducted on the adsorption properties and gas detection capabilities of these modified sensors toward key dissolved gases commonly found in insulating oil, specifically H2 and C2H2. The findings demonstrate that SnS2 sensors doped with Pd and Pt possess outstanding gas-sensing capabilities. Specifically, the Pd-SnS2 sensor demonstrates a high sensing response of 342.57 to H2, enabling rapid detection of H2 concentration in insulating oil. For C2H2, the recovery time of Pd-SnS2 is only <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.5\times 10 ^{-2}$ </tex-math></inline-formula> s at 498 K, showcasing remarkable fast response capabilities. The adsorption performance follows the order: Pd-SnS2/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{H}_{2} \gt $ </tex-math></inline-formula> Pt-SnS2/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{H}_{2} \gt $ </tex-math></inline-formula> Pt-SnS2/C2<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{H}_{2} \gt $ </tex-math></inline-formula> Pd-SnS2/C2H2, with all adsorption processes characterized as chemical adsorption. This study proposes a highly efficient gas-sensing material capable of accurately detecting dissolved gases generated by arc discharge in oil-immersed transformers. The findings provide technical support for early fault warning in transformers and lay a foundation for the safe operation of power equipment and the prevention of explosion accidents.
Authors
- Yulin Yan (ORCID: https://orcid.org/0000-0002-6836-0470)
- Tianmei Sun
- Shaopeng Xu
- Fan Yu
Institutions
- Hainan University (CN)
- University of Malaya (MY)
- Soochow University (CN)
- Chongqing University of Technology (CN)
Publication Details
- Journal
- IEEE Access
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/access.2025.3597454
- Citations
- 1
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.73