Out-of-Plane Printed Photodetectors on Fully Encapsulated Ultrathin Chip

Flexible active sensor matrix is of interest for applications, such as electronic skin (e-skin) for robotics and imaging, to effectively lower the signal crosstalk, improve response time, and reduce the power consumption. As a result, considerable advances have been made, but so far, the focus has been on the integration of various electronic components in the same plane, i.e., in the 2-D configuration, limiting to the low integration density. The 3-D integration could possibly resolve these limitations with lesser layout complexity, lower power consumption, and compact packaging. Toward this direction, we show herein the fabrication of out-of-plane photodetectors (PDs), and vertical interconnects printed on an encapsulated ultrathin chip to develop a 3-D electronic system for ultraviolet (UV) light sensing. The printed PDs show high peak responsivity (R = >10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> A/W), and I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">photo</sub>/I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dark</sub> ratio (≈ 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>) at the UV light (λ = 365 nm) intensity of 0.5 µW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 2 V bias. The photoinduced transfer curves of MOSFETs integrated with the printed PD were obtained at V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> = 0.5, 1, and 2 V under dark and different incident power intensities ranging from 0.5 to 2.5 µW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with a step of 0.5 µW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The controlled sensing behavior (i.e., stable low-off currents), evident from the data obtained using the integrated pixel, confirms the potential of presented approach for the development of active-matrix 3-D heterogeneously integrated sensory systems.

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Journal
IEEE Sensors Letters
Published
2025-08-11
DOI
https://doi.org/10.1109/lsens.2025.3597531
Primary Topic
Semiconductor Lasers and Optical Devices
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article
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article

Out-of-Plane Printed Photodetectors on Fully Encapsulated Ultrathin Chip

Adamos Christou, Abhishek Singh Dahiya, Ravinder Dahiya, Sihang Ma
IEEE Sensors Letters
Semiconductor Lasers and Optical Devices
article

Out-of-Plane Printed Photodetectors on Fully Encapsulated Ultrathin Chip

Adamos Christou, Abhishek Singh Dahiya, Ravinder Dahiya, Sihang Ma
article en

Abstract

Flexible active sensor matrix is of interest for applications, such as electronic skin (e-skin) for robotics and imaging, to effectively lower the signal crosstalk, improve response time, and reduce the power consumption. As a result, considerable advances have been made, but so far, the focus has been on the integration of various electronic components in the same plane, i.e., in the 2-D configuration, limiting to the low integration density. The 3-D integration could possibly resolve these limitations with lesser layout complexity, lower power consumption, and compact packaging. Toward this direction, we show herein the fabrication of out-of-plane photodetectors (PDs), and vertical interconnects printed on an encapsulated ultrathin chip to develop a 3-D electronic system for ultraviolet (UV) light sensing. The printed PDs show high peak responsivity (R = >10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> A/W), and I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">photo</sub>/I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dark</sub> ratio (≈ 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup>) at the UV light (λ = 365 nm) intensity of 0.5 µW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 2 V bias. The photoinduced transfer curves of MOSFETs integrated with the printed PD were obtained at V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> = 0.5, 1, and 2 V under dark and different incident power intensities ranging from 0.5 to 2.5 µW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with a step of 0.5 µW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The controlled sensing behavior (i.e., stable low-off currents), evident from the data obtained using the integrated pixel, confirms the potential of presented approach for the development of active-matrix 3-D heterogeneously integrated sensory systems.

IEEE Sensors LettersVol. 9(9)
Northeastern University (US), Semefab (United Kingdom) (GB)
Affordable and clean energy
Openalex Percentile: Top 81%
Semiconductor Lasers and Optical Devices
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