Prediction of the Ultraviolet Luminescence Potential of Bi2SeO5: First-Principles Insights
As a new layered semiconductor material, Bi2SeO5 has shown potential in the field of ultraviolet electronic devices in recent years because of its unique crystal structure and wide band gap. In this paper, the crystal structure, electronic structure, and thermodynamic stability of Bi2SeO5 are studied based on first-principles calculations. The ultraviolet luminescence property of BiSe defect is predicated from defect property, which provides theoretical basis for experimental design of high-performance Bi2SeO5 photoelectric devices.
Authors
- Longfei He (ORCID: https://orcid.org/0000-0003-2626-0372)
- Chen‐Min Dai (ORCID: https://orcid.org/0000-0002-9049-925X)
- Feng Yuan (ORCID: https://orcid.org/0000-0001-9979-3853)
- Jiamin Li (ORCID: https://orcid.org/0009-0003-1157-9177)
- Yi Zhou (ORCID: https://orcid.org/0000-0002-5762-5349)
- Yangzhong Bian
Institutions
- Suzhou University of Science and Technology (CN)
Publication Details
- Journal
- Journal of Electronic Research and Application
- Published
- 2025-08-11
- DOI
- https://doi.org/10.26689/jera.v9i4.11649
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation