Circuit Analysis of a Junctionless FINFET by Incorporating Buried Metal Layer

This work presents the design and simulation of a Junctionless (JL) FinFET integrated with a buried metal layer to enhance gas sensitivity for potential applications in environmental monitoring and safety. Traditional gas sensors often suffer from limitations in sensitivity and response time, necessitating innovative approaches. The proposed Junctionless FinFET architecture leverages the absence of p-n junctions to achieve better scalability and reduced leakage currents. Incorporating a buried metal layer not only improves the electrical characteristics of the device but also enhances its interaction with target gas molecules, leading to improved sensitivity. Simulation results, obtained through advanced TCAD tools, demonstrate that the proposed device configuration exhibits significant improvements in both current modulation and response time compared to conventional gas sensors. The incorporation of the buried metal layer creates an enhanced electric field, promoting increased charge carrier mobility and facilitating faster gas detection. The study also explores the device's performance by building inverter and sram circuit. Overall, the findings indicate that the Junctionless FinFET with a buried metal layer presents a promising platform for developing highly sensitive and efficient gas sensors

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Published
2025-06-05
DOI
https://doi.org/10.1109/icetea64585.2025.11100028
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
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article
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article

Circuit Analysis of a Junctionless FINFET by Incorporating Buried Metal Layer

R. Vasanth, Ashok Kumar Shanmugaraj, K Anbarasu, C Vishvakeerthi
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Advancements in Semiconductor Devices and Circuit Design
article

Circuit Analysis of a Junctionless FINFET by Incorporating Buried Metal Layer

R. Vasanth, Ashok Kumar Shanmugaraj, K Anbarasu, C Vishvakeerthi
article en

Abstract

This work presents the design and simulation of a Junctionless (JL) FinFET integrated with a buried metal layer to enhance gas sensitivity for potential applications in environmental monitoring and safety. Traditional gas sensors often suffer from limitations in sensitivity and response time, necessitating innovative approaches. The proposed Junctionless FinFET architecture leverages the absence of p-n junctions to achieve better scalability and reduced leakage currents. Incorporating a buried metal layer not only improves the electrical characteristics of the device but also enhances its interaction with target gas molecules, leading to improved sensitivity. Simulation results, obtained through advanced TCAD tools, demonstrate that the proposed device configuration exhibits significant improvements in both current modulation and response time compared to conventional gas sensors. The incorporation of the buried metal layer creates an enhanced electric field, promoting increased charge carrier mobility and facilitating faster gas detection. The study also explores the device's performance by building inverter and sram circuit. Overall, the findings indicate that the Junctionless FinFET with a buried metal layer presents a promising platform for developing highly sensitive and efficient gas sensors

Karpagam Academy of Higher Education (IN)
Openalex Percentile: Top 81%
Advancements in Semiconductor Devices and Circuit Design
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Circuit Analysis of a Junctionless FINFET by Incorporating Buried Metal Layer — R. Vasanth, Ashok Kumar Shanmugaraj, et al. · (2025) | TGRS Research Map | TGRS