A 131–140 GHz Power Amplifier in 40-nm CMOS
This paper presents a 131–140-GHz power amplifier (PA), which features a four-stage configuration. A magnetically-coupled-resonator-based (MCR-based) structure is proposed to improve both bandwidth (BW) and the gainbandwidth product (GBW). Fabricated in a 40-nm CMOS technology, the PA measures a peak gain of 12.1 dB at 136.5 GHz, and a 3-dB bandwidth (BW3dB) of 9 GHz from 130.8 to 139.8 GHz. The saturated output power (PSAT) measures 5.8 dBm at 136.5 GHz.
Authors
- Liang Wu
- Yihui Wang (ORCID: https://orcid.org/0000-0003-1104-9718)
- Haikun Jia (ORCID: https://orcid.org/0000-0003-4564-8938)
- Xiaodong Zhao (ORCID: https://orcid.org/0000-0001-8376-3350)
Institutions
- Chinese University of Hong Kong, Shenzhen (CN)
- Tsinghua University (CN)
Publication Details
- Published
- 2025-05-23
- DOI
- https://doi.org/10.1109/iwrfat65352.2025.11102978
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China